Electronically Tunable Nanomaterials
Horst Hahn
Professor
Forschungszentrum Karlsruhe
Institute for Nanotechnology and Joint Research
Laboratory Nanomaterials
Technische Universität Darmstadt
Darmstadt, Germany
The properties of materials are typically controlled in a static
manner by the microstructure. This implies control of the grain size,
defect concentration, structure and metastability. As long as the
microstructure does not change during the use of the material, the
properties of the material are fixed, or irreversible. In contrast, in
semiconducting materials, properties can be tuned by the application
of an external field due to the space charge regions which extend far
from the interfaces. In metallic systems, this effect cannot be
observed unless the dimensions of the structures are in the nanometer
regime. The reason for this different behavior is the small spatial
dimension of the space charge regions due to the effective screening
of the induced charges by the conduction electrons.
In nanoporous metals and thin films exposed to appropriate
electrolytes, it has been demonstrated that substantial changes of
physical properties can be induced by the application of a potential
between the nanostructured metal and a counter electrode. Examples of
the changes of surface stresses and the electrical resistivity of thin
gold films and nanoporous gold will be presented. A simple model is
proposed based on the modification of the electron density
distribution at the interface of the metal and the
electrolyte. Effectively, the corresponding change of the effective
thickness of the sample is the major cause of the observed resistivity
change.
Additionally, a transparent conducting oxide, ITO, in a
nanoparticulate form has been prepared from a dispersion using spin
coating. The observed resistivity changes, i.e. the on/off ratio can
be as large as 2.000, i.e. 200.000%, between the different values of
the control potential. Moreover, the device exhibits field effect
transistor behavior identical to a conventional semiconductor, but in
this case observed in a material with a large charge carrier density
exhibiting metallic conduction behavior. Additionally, the mobility is
exceeding 20 cm2/Vs. The device can be used for printable
electronics and transparent electronics.
Wednesday, April 2, 2008
3:30 PM
Seaver Science Library, Room 150 (SSL 150)
Refreshments will be served at 3:15 pm.
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